3D Micro and Nanoheater Design for Ultra-Low Power Gas Sensors

ABSTRACT

High-efficiency, ultra-low power gas sensors are provided. In one aspect, a gas detector device is provided which includes: at least one gas sensor having a plurality of fins; a conformal resistive heating element on the fins; a conformal barrier layer on the resistive heating element; and a conformal sensing layer on the barrier layer. A method of forming a gas sensor as well as a method for use thereof in gas detection are also provided.

FIELD OF THE INVENTION

The present invention relates to gas sensors, and more particularly, tohigh-efficiency, ultra-low power gas sensors.

BACKGROUND OF THE INVENTION

There is a great need for portable low power volatile organic compound(VOC) sensors for monitoring VOC emission in today's industrial scalenatural gas production. See, for example, Karion et al., “Methaneemissions estimate from airborne measurements over a western UnitedStates natural gas field,” Geophysical Research Letters, vol. 40, pgs.1-5 (August 2013) and J. Peischl et al., “Quantifying sources of methaneusing light alkanes in the Los Angeles basin, California,” Journal ofGeophysical Research: Atmospheres, vol. 118, pgs. 4974-4990 (May 2013).

Semiconductor metal oxide based gas sensors have great potential in suchapplications due to their low cost and portability. However, the powerconsumption of such sensors is relatively high (e.g., greater than 50mW), which hinders their application in continuous monitoring withbattery power in a service time scale of years. For instance,microelectromechanical (MEMS)-based membrane gas sensors, which arecurrently the most advanced and of the lowest power consumption, stillconsume from about 6 mW to about 20 mW of power. The high powerconsumption of these sensors is mainly due to the requirement ofoperating the sensors at elevated temperatures (e.g., from about 300° C.to about 400° C.) during gas sensing in order to achieve reasonablesensitivity.

Therefore, improved low-power gas sensors would be desirable.

SUMMARY OF THE INVENTION

The present invention provides high-efficiency, ultra-low power gassensors. In one aspect of the invention, a gas detector device isprovided. The gas detector device includes: at least one gas sensorhaving a plurality of fins; a conformal resistive heating element on thefins; a conformal barrier layer on the resistive heating element; and aconformal sensing layer on the barrier layer.

In another aspect of the invention, a method of forming a gas sensor isprovided. The method includes the steps of: patterning a plurality offins in a substrate; depositing a conformal resistive heating element onthe fins; depositing a conformal barrier layer on the resistive heatingelement; and depositing a conformal sensing layer on the barrier layer.

In yet another aspect of the invention, a method of gas detection isprovided. The method includes the steps of: providing a gas detectordevice having at least one gas sensor that includes: a plurality offins; a conformal resistive heating element on the fins; a conformalbarrier layer on the resistive heating element; and a conformal sensinglayer on the barrier layer; heating the gas sensor via the resistiveheating element; and taking readings from the gas sensor.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional diagram illustrating a plurality of finshaving been patterned in a substrate according to an embodiment of thepresent invention;

FIG. 2 is a cross-sectional diagram illustrating a resistive heatingelement having been formed on the fins according to an embodiment of thepresent invention;

FIG. 3 is a cross-sectional diagram illustrating a thin barrier layerhaving been deposited onto the resistive heating element according to anembodiment of the present invention;

FIG. 4 is a cross-sectional diagram illustrating a sensing layer havingbeen deposited onto the barrier layer, and optional air pockets or poreshaving been formed in the substrate to reduce thermal conductivityaccording to an embodiment of the present invention;

FIG. 5 is a cross-sectional diagram illustrating the completed sensoroptionally having been detached from the substrate and reattached to adifferent, low-κ substrate according to an embodiment of the presentinvention;

FIG. 6 is a top-down diagram of the structure of FIG. 5 following thesensor having been patterned into a plurality of parallel,interconnected rows, forming a serpentine sensor layout according to anembodiment of the present invention;

FIG. 7 is a three-dimensional diagram of the present gas sensor orientedas a plurality of parallel rows interconnected by the resistive heatingelement in a serpentine configuration according to an embodiment of thepresent invention;

FIG. 8 is a three-dimensional diagram illustrating the barrier layer andsensing layer having been deposited onto the resistive heating element,and sensing electrodes having been formed to complete the sensoraccording to an embodiment of the present invention;

FIG. 9 is a three-dimensional diagram illustrating the sensor havingbeen transferred to a low-κ substrate according to an embodiment of thepresent invention;

FIG. 10 is a three-dimensional diagram illustrating multiple sensorscompiled into an array according to an embodiment of the presentinvention;

FIG. 11 is a diagram illustrating an exemplary methodology for gasdetection using the present gas sensors according to an embodiment ofthe present invention; and

FIG. 12 is a diagram illustrating an exemplary apparatus for performingone or more of the present methodologies according to an embodiment ofthe present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As provided above, a significant drawback to current gas sensortechnology is a relatively high power consumption, which limits theirlong term use in the field. Advantageously, provided herein are newinnovative gas sensor designs which can achieve 100× reduction in powerconsumption as compared with conventional sensors.

The typical gas sensor on the market today uses ceramic or glasssubstrates to benefit from the low thermal conductivity of thesematerials. However, the heated area is relatively large: in hundreds ofmicrons to over several millimeters in linear dimensions. There havealso been efforts to try to build gas sensors on silicon substrates toutilize complementary metal-oxide semiconductor (CMOS) technology. Anexample of such sensors is microelectromechanical (MEMS)-based membranegas sensors. See, for example, U.S. Patent Application PublicationNumber 2015/0090043 by Ruhl et al., entitled “MEMS.” There are, however,three key drawbacks of the MEMS based sensor design. First, the highthermal conductivity of the silicon (Si) substrate makes it hard toachieve power reduction due to the large amount of thermal loss throughthe substrate. Second, due to the chemical wet etch process limitations,a relatively large size heater is produced (several hundreds ofmicrometers). Third, the mechanical strength of the membrane in portablesensors is a concern.

The full potential of battery-powered gas sensors cannot be fulfilledwithout the successful scaling of the heater down to a few micrometersor submicron dimensions either on silicon substrate or on ceramic/glasssubstrates. In the present sensor design, the heater size and the sensordimensions are substantially reduced down to micrometer scale (less than10 micrometers in size) and even nanometer.

Advantageously, the present design can reduce power consumptionsubstantially in three aspects. First, according to an exemplaryembodiment, the commonly used Si substrate is replaced with the samethickness of silicate glass wafers. The thermal conductivity ofborosilicate glass is about 1.1 watts per meter Kelvin (W/m·K). Thisalone can reduce heat loss of the substrate by about 100× (as comparedto Si) without compromising the mechanical strength of the substrate.According to another exemplary embodiment, low thermal conductivity onsilicon is achieved by creating air pockets or pores inside the siliconsubstrate using a dry etch process.

Second, as will be described in detail below, the heating element iswoven inside the sensor fins in order to maximize heat utilization byclosely patterning the fins. In this manner, the sensing area isincreased by a factor of from about 5 to about 10 times for the samearea of substrate. To put it in another way, heat dissipation throughthe substrate is reduced by a factor from about 5 to about 10 times withthe same amount of tin oxide (SnO₂) sensing surface as compared with aplanar layout.

Third, according to an exemplary embodiment, a serpentine layout is usedfor the fins. A serpentine layout can scale down the dimension of totalsensing area without compromising resistive path length of the sensingmaterials. This opens the door for miniaturization of sensors andenables array fabrication without significant cost increase.

An exemplary process for fabricating the present gas sensor is nowdescribed by way of reference to FIGS. 1-7. As shown in FIG. 1, theprocess begins with a substrate 102 in which a plurality of fins 104 ispatterned. According to an exemplary embodiment, the starting platformfor the process is a silicon-on-insulator (SOI) wafer. As is known inthe art, a SOI wafer includes a SOI layer separated from a substrate(e.g., a silicon (Si) substrate) by a buried insulator. The buriedinsulator can include, for example, an oxide, such as a silicon dioxide(SiO₂). When the buried insulator is an oxide, it is commonly referredto as a buried oxide or BOX. In this example, the fins 104 are patternedby first forming a plurality of fin masks 104 a on the SOI layer.According to an exemplary embodiment, the fin masks 104 a are formedfrom an insulator such as SiO₂ (see FIG. 1) or silicon nitride (SiN).The fin masks 104 a can be formed by directly patterning a suitable maskmaterial or, optionally, a pitch-doubling technique such as sidewallimage transfer (SIT) may be employed. SIT generally involves forming oneor more mandrels on a substrate, forming spacers on opposite sides ofthe mandrel(s), removing the mandrel(s) selective to the spacers, andthen using the spacers to pattern the substrate. An advantage to SIT isthat it permits patterning features at a sub-lithographic pitch. Thespacers too may be formed from an insulator such as SiO₂ or SiN.

Standard lithography and etching techniques can then be used to patternthe SOI layer, via the fin masks 104 a, into individual fin portions 104b. In this example, the fin masks 104 a and the patterned SOI layerportions 104 b are what form the fins 104. As highlighted above, aburied insulator is present beneath the SOI layer. Thus, in thisexemplary embodiment, the substrate 102 shown in FIG. 1 would be theburied insulator (e.g., SiO₂).

The process is, however, not limited to SOI wafer configurations. Forinstance, in the same manner described, the fins 104 can be patterned ina bulk semiconductor (e.g., a bulk Si wafer). To isolate the fins, aninsulator (such as SiO₂) can be deposited or grown on the fins, therebyforming the fin configuration shown in the figures, i.e., having an SiO₂portion 104 a and an Si portion 104 b.

As will be apparent from the following description, the purpose of thefins 104 is to provide a template on which a plurality of gas sensors isbuilt. Building the sensor on a high-aspect ratio fin structure greatlyincreases the surface area and thereby the sensitivity of the sensorswithout increasing the overall sensor footprint. According to anexemplary embodiment, the fins each have a width (W_(FIN)) of from about20 nanometers (nm) to about 100 nm, and ranges therebetween, and afin-to-fin spacing (S_(FIN)) of from about 50 nm to about 150 nm, andranges therebetween.

A resistive heating element 202 is then formed on the fins 104. See FIG.2. According to an exemplary embodiment, the resistive heating element202 is formed from a thin conformal layer of a metal, such as tantalumnitride (TaN), titanium nitride (TiN_(x)), tungsten (W), and otherresistive metals or compounds containing at least one of the foregoingmetals, using a process such as evaporation or sputtering, to athickness of from about 3 nanometers (nm) to about 10 nm, and rangestherebetween.

A thin barrier layer 302 is next deposited onto the resistive heatingelement 202. See FIG. 3. According to an exemplary embodiment, thebarrier layer 302 is formed from a thin conformal layer of a nitridematerial such as silicon nitride (SiN), silicon oxide (SiO_(x)),alumina, other insulating oxides or nitrides, or combinations thereof,using a process such as chemical vapor deposition (CVD) or atomic layerdeposition (ALD), to a thickness of from about 1.5 nm to about 3 nm, andranges therebetween.

A sensing layer 402 is then deposited onto the barrier layer 302. SeeFIG. 4. The type of sensing layer used depends on the gas beingdetected. By way of example only, tin oxide (SnO₂)-based sensors aresensitive to a variety of different gases, such as methane (CH₄),hydrogen sulfide (H₂S), sulfur dioxide (SO₂), carbon monoxide (CO), etc.Zinc oxide (ZnO)-based sensors are sensitive to gases such as oxygen(O₂), carbon dioxide (CO₂), and hydrogen (H₂). Thus, according to anexemplary embodiment, the sensing layer 402 is formed from SnO₂, ZnO, ora mixture thereof, e.g., zinc tin oxides. The resistance through a SnO₂,ZnO, or zinc tin oxide sensing layer changes when exposed to aparticular gas or gasses. Generally, during operation, a SnO₂, ZnO, orzinc tin oxide gas sensor is heated to a temperature of greater thanabout 300° C. (e.g., from about 300° C. to about 600° C., and rangestherebetween)—since at room temperature, no reaction will occur. Whenthe heated sensor is exposed to one of the above gases, the resistancethrough the sensing layer will drop. Thus by monitoring the resistanceof the sensing layer, the presence of the gas can be easily detected.The amount by which the resistance changes is dependent on severaldifferent factors. For instance, as provided above, a SnO₂, ZnO, or zinctin oxide sensing layer reacts with a variety of different gases.However, the temperature at which the reaction occurs varies dependingon the gas. Thus, one can control the temperature to control which gasesthe sensor is sensitive to. Also, the amount by which a given gas reactswith a given sensing layer varies depending on the gas. Thus, for agiven temperature, one can also detect the presence of different gasesbased on the resistance changes in the sensing layer.

As provided above, one important design consideration contemplatedherein is to be able to reduce power consumption of the sensors byreducing the amount of heat conducted through the substrate. Namely, ifthe substrate acts as a significant thermal conductor, then a greateramount of heat needs to be generated (i.e., by the resistive heatingelement) to achieve a given temperature, which in turn uses more power.A few different techniques are anticipated herein for reducing thethermal conductivity of the sensor substrate.

In a first exemplary embodiment, the thermal conductivity of thesubstrate 102 is reduced by creating air pockets 404 in the substrate102. See, for example, FIG. 4. The concept here is that the thermalconductivity of air is orders of magnitude less than that of the (e.g.,SiO₂) substrate. Thus, by creating pockets of air in the substrate 102,its overall thermal conductivity will be reduced (as compared with asubstrate 102 without such air pockets). The air pockets 404 can becreated in the substrate 102 using a standard dry etching process, suchas deep plasma etching. As shown in FIG. 4, the air pockets are etchedfrom the backside of the substrate 102 and extend almost through thesubstrate 102. One skilled in the art would be able to control a plasmaetching process to create such vias in a substrate that extend part waythrough the substrate.

Another technique anticipated herein for reducing the thermalconductivity of the substrate is to detach the completed sensor from thebulk of substrate 102 and attach it to a low-κ substrate 502, such as aceramic or borosilicate glass substrate. Backside polishing, spalling,vapor phase etching, or chemical etching methods can be used to detachthe sensors from the bulk silicon substrate. See FIG. 5. As providedabove, the thermal conductivity of borosilicate glass is about 1.1W/m·K. Any technique known in the art for releasing a device from thebulk of a substrate may be employed. See, for example, Overstolz et al.,“A Clean Wafer-Scale Chip-Release Process Without Dicing Based on VaporPhase Etching,” 17^(th) IEEE International Conference on Micro ElectroMechanical Systems, pgs. 717-720 (2004),” the contents of which areincorporated by reference as if fully set forth herein. As shown in FIG.5, a portion of the original substrate 102 preferably remains in placeto provide mechanical support during the substrate transfer process.

According to an exemplary embodiment, a serpentine layout of the gassensors is employed. By “serpentine,” it is meant that the gas sensorincludes multiple interconnected rows of the resistive heating element202/barrier layer 302/sensing layer 402. For instance, as will bedescribed in detail below, in one example, the resistive heating element202 in two adjacent rows is connected at one end of the rows. Theresistive heating element 202 is connected to the next adjacent row atthe opposite end, and so on, forming a serpentine layout ofinterconnected rows. This serpentine layout serves to balance twoimportant design considerations, one being minimizing power consumption,and the other maximizing sensor sensitivity. With regard to minimizingpower consumption—by having the heating element and sensing layerdivided into distinct interconnected rows (rather than, e.g., a singleheater/sensing layer over the entire footprint of the sensor), the totalarea of the sensing layer needing to be heated is reduced, therebyreducing the overall power consumption. However, with the serpentinelayout, the sensing layer is still present across the entire footprintof the sensor, thereby maximizing sensitivity.

This serpentine layout can be achieved in a number of different ways.For instance, according to one exemplary embodiment, the sensor can bebuilt in the manner described above. Following deposition of the sensinglayer 402, the sensor can then be divided into a plurality of distinctrows. For instance, standard lithography and etching techniques can beused to divide the fins and sensor structure into multiple parallelrows. See, for example, FIG. 6. FIG. 6 is a top-down view of thestructure of FIG. 5 (i.e., from a viewpoint A) following the fins andsensor structure having been patterned into a plurality of parallel rowsa, b, etc. For clarity, the top of the structure has been removed inFIG. 6 so that the various device layers are visible. As shown in FIG.6, the patterning in this case extends down through the fins 104 suchthat each fin is divided into two or more separate rows of the sensor.An arrow is provided in FIG. 5 to indicate the orientation of the cutthrough the fins/sensor structure to form the rows depicted in FIG. 6.

To form the serpentine layout, each of the patterned rows isinterconnected. See FIG. 6. According to an exemplary embodiment, a wireor other electrically conductive conduit is used to connect theresistive heating element 202 in adjacent rows, forming a continuousresistive heating path throughout the sensor. Thus, for instance, if thesensor is patterned into 10 distinct rows, then one common resistiveheating path is created interconnecting each of the 10 rows.

As shown in FIG. 7, the present gas sensor is provided having aserpentine layout. For consistency, like structures with the embodimentsdescribed above are numbered alike in the following figures. The sensorshown in FIG. 7 is formed using the above-described process. In thisexample, the various rows of the serpentine design are interconnected byoverlapping portions of the resistive heating element 202 that connectadjacent rows. In particular, as shown in FIG. 7, the resistive heatingelement 202 interconnects two adjacent rows at one end, and the nextadjacent rows at the opposite ends thereby forming a serpentine design.

In the same manner as described above, the barrier layer 302 (notvisible) and sensing layer 402 is then deposited onto the resistiveheating element 202. See FIG. 8. Standard metallization techniques arethen used to form sensing electrodes 802 in contact with the sensinglayer 402. The sensing electrodes 802 serve to measure the resistancethrough the sensing layer 402. In the example shown in FIG. 8, thesensing electrodes 802 are formed on opposite sides of the sensor,parallel to the rows. In other words, the (serpentine) interconnectedrows (i.e., rows a-g, see FIG. 7) run along a y-axis. The rows areadjacent to one another on the z-axis. The sensing electrodes 802 arepresent on opposite ends of the sensor (along the z-axis). The finsincrease the sensing area along the x-axis (without increasing theoverall sensor footprint—see above).

As described above, one technique anticipated herein for reducing theoverall thermal conductivity of the substrate is to release the sensorfrom its original substrate and transfer the sensor to a low-κ substrate(e.g., low-κ substrate 902), such as a ceramic or borosilicate glasssubstrate. See FIG. 9.

As will be described in detail below, an array of the present sensors(as shown, for example, in FIGS. 7-10) can provide several notablebenefits. First, an array provides a degree of redundancy. For instance,environmental factors in the field, such air current, wind etc. canaffect the presence, concentration, etc. of a gas being detected. Inwindy conditions, the gas might pass undetected over a single sensor.However, by employing an array of sensors over which the gas passes,there is a greater chance that the gas will be detected by at least someof the sensors in the array. Further, using multiple sensors (i.e., inan array) can also provide data useful in pinpointing the source of thegas. For instance, assuming the orientation of the sensor array isknown, then the gas passing over the array will first be detected by thesensors in the array closest to the source, followed by the sensorsalong the path of travel of the gas flow. Therefore, data collectedabout which sensors in the array detected the gas and when, one candeduce the path of flow of the gas.

Another notable benefit of an array design is that different sensors(sensitive to different gasses) can be included in the same array, thusmaking the data collected in the field more comprehensive. For instance,gas leaks can include more than one type of gas. As provided above, thesensitivity of the sensing layer (such as SnO₂) to different gasses canvary depending on the temperature at which the sensing layer is operated(via the resistive heating element). Thus, by way of example only,different sensors in the array can be operated at differenttemperatures, thereby making the array sensitive to a variety ofdifferent gases.

The completed sensor 900 may now be used in the field for gas sensing.However, as highlighted above, embodiments are anticipated herein wheremultiple sensors are arranged as array. As described above, there arenotable advantages to an array implementation. For instance, multiplesensors provide a level of redundancy, thereby increasing the overallaccuracy of the measurements. Further, the detection of the path of thegas over the sensors in the array can be used to pinpoint the source(e.g., thereby enabling detection of the source of a gas leak, etc.).The array might also include different sensors (i.e., sensors fordetecting different gases). In that case, the array can enable detectionof different gas species (e.g., in the instance where a gas leakcontains multiple gases).

Thus, according to an exemplary embodiment, as shown in FIG. 10 multiplesensors 900 are compiled in an array. In this case, there are 7×8=56sensors in the array. This is however only an example, and arrayscontaining more or fewer sensors than shown are contemplated herein.FIG. 10 illustrates one of the above-mentioned advantages of a sensorarray. Namely, an arrow 1002 is used to illustrate the path of a gasacross the sensor array. As the gas is first detected by the sensor(s)at point A in the array, and then by the sensors along the path frompoint to point B in the array, it may be assumed that the source of thegas is present (along that path, at its origin).

FIG. 11 is a diagram illustrating an exemplary methodology 1100 for gasdetection using the present sensors. In step 1102, at least one of thepresent gas sensors is provided. According to an exemplary embodiment,the gas sensor is configured to have the serpentine layout describedabove. Further, according to an exemplary embodiment, a plurality of thepresent gas sensors is present and are arranged in array (see, forexample, FIG. 10). Yet further, according to an exemplary embodiment,one or more of the sensors in the array is different from another one ormore of the sensors in the array (i.e., the sensors in the array areconfigured to detect different gases).

In step 1104, the sensing layer 402 in the at least one sensor is heatedto a given temperature via the resistive heating element 202. Asprovided above, the selectivity of the sensor to different gases canvary depending on the sensor temperature. For instance, the ability of aSnO₂ sensing layer 402 to detect various gases can be changed simply byvarying the temperature of the sensing layer 402. For instance, at atemperature of 350° C. a SnO₂ sensor can detect both methane and butanegas however, when the temperature is raised to 425° C., the same sensoris selective to detecting only butane. See, for example, Chakraborty etal., “Selective Detection of methane and butane by temperaturemodulation in iron doped tin oxide sensors,” Sensors and Actuators B:Chemical, vol. 115, issue 2, pgs. 610-613 (June 2006), the contents ofwhich are incorporated by reference as if fully set forth herein.

It is notable that the individual sensors in an array can beindependently heated to different temperatures, e.g., so as to regulatetheir sensitivity to various different gases. Thus, according to anexemplary embodiment, in step 1104 at least one of the sensors in thearray is heated to a different temperature from at least one or moreother sensors in the array to confer different sensing capabilitiesacross the array.

In step 1106, readings are taken from the sensors. As described indetail above, the resistance of the sensing layer 402 changes when thesensors are exposed to a gas. For instance, in the case of a SnO₂sensing layer, the resistance of the sensing layer changes when thesensor is exposed to a certain gas(es) such as methane. The resistanceof the sensing layer 402 can be measured via the sensing electrodes 802.Further, in step 1106, the readings are preferably time stamped (i.e.,the time the readings are taken are recorded). As provided above, thiswill enable detection of the path of the gas across the sensor array.Take for instance the scenario where a gas is detected at times T1, T2,and T3 (wherein T1<T2<T3) at sensors S1, S2, and S3, respectively, inthe array. It can be assumed that the path of the gas across the arrayis along sensors S1, S2, and S3, in that order. One can then trace backthe path to approximate the source of the gas. See, for example FIG. 10.

Any data storage, collection and/or processing may be carried out inconjunction with the present gas sensing device, for example, using anapparatus such as that shown in FIG. 12. In FIG. 12, a block diagram isshown of an apparatus 1200 for implementing one or more of themethodologies presented herein. Apparatus 1200 includes a computersystem 1210 and removable media 1250. Computer system 1210 includes aprocessor device 1220, a network interface 1225, a memory 1230, a mediainterface 1235 and an optional display 1240. Network interface 1225allows computer system 1210 to connect to a network, while mediainterface 1235 allows computer system 1210 to interact with media, suchas a hard drive or removable media 1250.

Processor device 1220 can be configured to implement the methods, steps,and functions disclosed herein. The memory 1230 could be distributed orlocal and the processor device 1220 could be distributed or singular.The memory 1230 could be implemented as an electrical, magnetic oroptical memory, or any combination of these or other types of storagedevices. Moreover, the term “memory” should be construed broadly enoughto encompass any information able to be read from, or written to, anaddress in the addressable space accessed by processor device 1220. Withthis definition, information on a network, accessible through networkinterface 1225, is still within memory 1230 because the processor device1220 can retrieve the information from the network. It should be notedthat each distributed processor that makes up processor device 1220generally contains its own addressable memory space. It should also benoted that some or all of computer system 1210 can be incorporated intoan application-specific or general-use integrated circuit.

Optional display 1240 is any type of display suitable for interactingwith a human user of apparatus 1200. Generally, display 1240 is acomputer monitor or other similar display.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A gas detector device, comprising: at least onegas sensor comprising: a plurality of fins; a conformal resistiveheating element on the fins; a conformal barrier layer on the resistiveheating element; and a conformal sensing layer on the barrier layer. 2.The gas detector device of claim 1, wherein the gas sensor furthercomprises: a substrate beneath the fins.
 3. The gas detector device ofclaim 2, wherein the substrate comprises a plurality of air pockets. 4.The gas detector device of claim 2, wherein the substrate comprises aceramic or borosilicate glass substrate.
 5. The gas detector device ofclaim 1, wherein the resistive heating element comprises a materialselected from the group consisting of: tantalum nitride, titaniumnitride, tungsten, and combinations thereof.
 6. The gas detector deviceof claim 1, wherein the barrier layer comprises a material selected fromthe group consisting of: silicon nitride, silicon oxide, alumina, andcombinations thereof.
 7. The gas detector device of claim 1, wherein thesensing layer comprises a material selected from the group consistingof: tin oxide, zinc oxide, and combinations thereof.
 8. The gas detectordevice of claim 1, wherein the gas sensor comprises multiple rows of theresistive heating element, the barrier layer, and the sensing layerinterconnected in a serpentine configuration.
 9. The gas detector deviceof claim 1, wherein the gas sensor further comprises: sensing electrodesin contact with the sensing layer.
 10. The gas detector device of claim1, comprising a plurality of gas sensors arranged in an array.
 11. Thegas detector device of claim 10, wherein at least one of the gas sensorsin the array is configured to detect a different gas than another atleast one of the gas sensors in the array.
 12. A method of forming a gassensor, the method comprising the steps of: patterning a plurality offins in a substrate; depositing a conformal resistive heating element onthe fins; depositing a conformal barrier layer on the resistive heatingelement; and depositing a conformal sensing layer on the barrier layer.13. The method of claim 12, further comprising the step of: formingsensing electrodes in contact with the sensing layer.
 14. The method ofclaim 12, further comprising the step of: dividing the gas sensor intomultiple rows of the resistive heating element, the barrier layer, andthe sensing layer interconnected in a serpentine configuration.
 15. Themethod of claim 12, further comprising the step of: forming a pluralityof air pockets in the substrate.
 16. The method of claim 12, furthercomprising the step of: detaching the gas sensor from the substrate; andtransferring the gas sensor to another substrate.
 17. The method ofclaim 16, wherein the other substrate comprises a ceramic orborosilicate glass substrate.
 18. A method of gas detection, the methodcomprising the steps of: providing a gas detector device having at leastone gas sensor comprising: a plurality of fins; a conformal resistiveheating element on the fins; a conformal barrier layer on the resistiveheating element; and a conformal sensing layer on the barrier layer;heating the gas sensor via the resistive heating element; and takingreadings from the gas sensor.
 19. The method of claim 18, wherein thegas detector device comprises a plurality of gas sensors arranged in anarray, the method further comprising the step of: heating at least onethe gas sensors in the array to a different temperature from another atleast one or more of the gas sensors in the array.
 20. The method ofclaim 18, wherein the gas detector device comprises a plurality of gassensors arranged in an array, the method further comprising the stepsof: recording a time the readings are taken from the gas sensors todetermine a path of a gas as the gas passes over the array.